ZHB6792TA
TRANS 2NPN/2PNP 70V 1A SOT223Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated ZHB6792TA is a high-performance Bipolar Junction Transistor (BJT) array featuring a complementary pair of NPN and PNP transistors configured as an H-bridge. This surface mount device, housed in a SOT-223-8 (SM8) package, offers a collector-emitter breakdown voltage of 70V and a continuous collector current capability of up to 1A. With a transition frequency of 100MHz and a maximum power dissipation of 1.25W, the ZHB6792TA is suitable for applications requiring efficient motor control and power switching. The device exhibits a minimum DC current gain of 300 at 100mA and 2V. Typical operating temperatures range from -55°C to 150°C. This component is commonly utilized in automotive and industrial control systems. The ZHB6792TA is supplied on tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-223-8 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN, 2 PNP (H-Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SM8 |
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