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ZHB6718TC

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ZHB6718TC

TRANS 2NPN/2PNP 20V 2.5A SOT223

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

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Diodes Incorporated ZHB6718TC is a bipolar transistor array featuring a complementary H-bridge configuration with two NPN and two PNP transistors. This device offers a 20V collector-emitter breakdown voltage and a maximum collector current of 2.5A. The minimum DC current gain (hFE) is specified at 200 at 2A and 2V. With a transition frequency of 140MHz and a maximum power dissipation of 1.25W, the ZHB6718TC is suitable for applications requiring efficient switching and amplification. Saturation voltage is a maximum of 200mV at 50mA base current and 2.5A collector current. The component is supplied in a SOT-223-8 (SM8) package for surface mounting and operates within an ambient temperature range of -55°C to 150°C. This transistor array finds utility in various industrial and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-223-8
Mounting TypeSurface Mount
Transistor Type2 NPN, 2 PNP (H-Bridge)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1.25W
Current - Collector (Ic) (Max)2.5A
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A, 2V
Frequency - Transition140MHz
Supplier Device PackageSM8

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