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ZDT6702QTA

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ZDT6702QTA

PWR MID PERF TRANSISTOR SM-8 T&R

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

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Diodes Incorporated ZDT6702QTA is a bipolar transistor array featuring a complementary Darlington configuration with one NPN and one PNP transistor. This device offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of up to 1.75A. The ZDT6702QTA boasts a high DC current gain, with a minimum hFE of 5000 at 500mA, 5V for the NPN and 2000 at 500mA, 5V for the PNP. Its transition frequency reaches 140MHz. The transistor array is housed in an SM-8 package, suitable for surface mounting, and is supplied in tape and reel packaging. With a maximum power dissipation of 2.75W and an operating temperature range of -55°C to 150°C (TJ), this component is engineered for applications in power management and general-purpose amplification within industrial and consumer electronics sectors. Collector-emitter saturation voltage (Vce Sat) is a maximum of 1.28V at 2mA base current and 1.75A collector current. Collector cutoff current is specified at a maximum of 500nA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-223-8
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP Complementary Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max2.75W
Current - Collector (Ic) (Max)1.75A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.28V @ 2mA, 1.75A
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce5000 @ 500mA, 5V / 2000 @ 500mA, 5V
Frequency - Transition140MHz
Supplier Device PackageSM-8

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