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MMDT5551-7

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MMDT5551-7

TRANS 2NPN 160V 0.2A SOT363

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Diodes Incorporated MMDT5551-7 is a bipolar transistor array featuring two NPN transistors in a single SOT-363 package. This device offers a collector-emitter breakdown voltage of 160V and a continuous collector current of up to 200mA. The MMDT5551-7 exhibits a transition frequency of 300MHz and a maximum power dissipation of 200mW. Minimum DC current gain (hFE) is 80 at 10mA and 5V, with a Vce saturation of 200mV at 5mA and 50mA. Collector cutoff current (ICBO) is a maximum of 50nA. The device is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. It is commonly utilized in general-purpose switching and amplification applications within the telecommunications and consumer electronics industries. The component is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 24 week(s)Product Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max200mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageSOT-363

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