MMDT5551-7
TRANS 2NPN 160V 0.2A SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated MMDT5551-7 is a bipolar transistor array featuring two NPN transistors in a single SOT-363 package. This device offers a collector-emitter breakdown voltage of 160V and a continuous collector current of up to 200mA. The MMDT5551-7 exhibits a transition frequency of 300MHz and a maximum power dissipation of 200mW. Minimum DC current gain (hFE) is 80 at 10mA and 5V, with a Vce saturation of 200mV at 5mA and 50mA. Collector cutoff current (ICBO) is a maximum of 50nA. The device is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. It is commonly utilized in general-purpose switching and amplification applications within the telecommunications and consumer electronics industries. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-363 |
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