MMDT5451-7
TRANS NPN/PNP 160V/150V SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated MMDT5451-7 is a bipolar transistor array featuring one NPN and one PNP transistor in a compact SOT-363 package. This device offers distinct collector-emitter breakdown voltages of 160V for the NPN and 150V for the PNP. It supports a maximum collector current (Ic) of 200mA and a transition frequency (fT) of 300MHz. DC current gain (hFE) is specified at a minimum of 80 for the NPN and 60 for the PNP at 10mA and 5V. Saturation voltages (Vce(sat)) are 200mV for the NPN and 500mV for the PNP, both at 5mA base current and 50mA collector current. The MMDT5451-7 is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Its specifications make it applicable in various consumer electronics and industrial control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V, 150V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V / 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-363 |
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