MMDT4146-7-F
TRANS NPN/PNP 25V 0.2A SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated MMDT4146-7-F is a bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-363 package. This device offers a collector-emitter breakdown voltage of 25V and a maximum collector current of 200mA. The NPN transistor exhibits a transition frequency of 300MHz, while the PNP transistor operates at 250MHz. With a maximum power dissipation of 200mW, it is suitable for surface mount applications. The minimum DC current gain (hFE) is 120 at 2mA collector current and 1V Vce. Typical Vce(sat) values are 300mV at 5mA/50mA for the NPN and 400mV at 5mA/50mA for the PNP. This component finds application in portable electronics and general-purpose switching. Supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 1V |
| Frequency - Transition | 300MHz, 250MHz |
| Supplier Device Package | SOT-363 |
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