MMDT4126-7-F
TRANS 2PNP 25V 0.2A SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated MMDT4126-7-F is a dual PNP bipolar junction transistor array. This component features a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 200mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 120 at 2mA and 1V, it is suitable for various switching and amplification applications. The device dissipates a maximum power of 200mW and has a collector cutoff current of 50nA (ICBO). It is supplied in a SOT-363 package for surface mounting and operates within an ambient temperature range of -55°C to 150°C. This transistor array is commonly utilized in consumer electronics, industrial control systems, and communication equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-363 |
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