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MMDT4126-7

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MMDT4126-7

TRANS 2PNP 25V 0.2A SOT363

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Diodes Incorporated MMDT4126-7 is a dual PNP bipolar junction transistor array designed for surface mount applications. This component features a 25V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 120 at 2mA and 1V, it is suitable for amplification and switching circuits. The device offers a maximum power dissipation of 200mW and operates within a temperature range of -55°C to 150°C. Supplied in a SOT-363 package, the MMDT4126-7 finds application in consumer electronics and general-purpose switching. The saturation voltage is 400mV at 5mA base current and 50mA collector current, with a maximum collector cutoff current of 50nA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max200mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)25V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 1V
Frequency - Transition250MHz
Supplier Device PackageSOT-363

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