LBN150B01-7
TRANS NPN/PNP 40V 0.2A SOT26Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated LBN150B01-7 is a bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-26 package. This component offers a collector-emitter breakdown voltage of 40V and supports a maximum collector current of 200mA. With a transition frequency of 250MHz and a maximum power dissipation of 300mW, it is suitable for applications requiring compact switching and amplification. The device exhibits typical DC current gain (hFE) of 30 for the NPN and 32 for the PNP at 100mA and 1V. Saturation voltages are specified at 360mV for the NPN and 500mV for the PNP, both at 20mA base current and 200mA collector current. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in consumer electronics and industrial control systems. The LBN150B01-7 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 1V / 32 @ 100mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-26 |