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IMX8-7-F

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IMX8-7-F

TRANS 2NPN 120V 0.05A SOT26

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Diodes Incorporated IMX8-7-F is a dual NPN bipolar junction transistor array designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 50mA, with a maximum power dissipation of 300mW. The transition frequency is specified at 140MHz, and it exhibits a minimum DC current gain (hFE) of 180 at 2mA collector current and 6V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 1mA base current and 10mA collector current. The device operates within a temperature range of -55°C to 150°C and is supplied in a SOT-26 package, presented on tape and reel. This transistor array is utilized in various industrial and consumer electronics applications requiring small-signal amplification and switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 6V
Frequency - Transition140MHz
Supplier Device PackageSOT-26

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