IMT4-7-F
TRANS 2PNP 120V 0.05A SOT26Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Diodes Incorporated IMT4-7-F is a dual PNP bipolar junction transistor (BJT) array. This component features a 120V collector-emitter breakdown voltage and a maximum collector current of 50mA. The device offers a minimum DC current gain (hFE) of 180 at 2mA collector current and 6V collector-emitter voltage. Its transition frequency is 140MHz, and it has a maximum power dissipation of 225mW. The saturation voltage (Vce) is specified at a maximum of 500mV at 1mA base current and 10mA collector current. Collector cutoff current (ICBO) is a maximum of 500nA. The IMT4-7-F is supplied in a SOT-26 surface mount package and is suitable for operation across a temperature range of -55°C to 150°C (TJ). This transistor array is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 225mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | SOT-26 |