HBDM60V600W-7
TRANS NPN/PNP 65V/60V SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated HBDM60V600W-7 is a bipolar transistor array featuring one NPN and one PNP transistor. The NPN transistor offers a collector-emitter breakdown voltage of 65V and a maximum collector current of 500mA, with a minimum DC current gain of 100 at 100mA collector current and 1V Vce. The PNP transistor provides a 60V collector-emitter breakdown voltage and a maximum collector current of 600mA, also with a minimum DC current gain of 100 at 150mA collector current and 10V Vce. Both transistors exhibit a transition frequency of 100MHz. Saturation voltages are specified as 400mV at 10mA base and 100mA collector for the NPN, and 500mV at 50mA base and 500mA collector for the PNP. With a maximum power dissipation of 200mW, this device is supplied in a SOT-363 package suitable for surface mounting. Operating temperature ranges from -55°C to 150°C. This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 500mA, 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V, 60V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V / 100 @ 150mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-363 |
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