DXTN3C100PD-13
PWR LOW SAT TRANSISTOR POWERDI50Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated DXTN3C100PD-13 is a dual NPN bipolar transistor array designed for high-efficiency power applications. This device features a 100V collector-emitter breakdown voltage and a maximum collector current of 3A, with a low saturation voltage of 330mV at 300mA/3A. The transition frequency is rated at 130MHz, enabling robust performance in switching circuits. With a maximum power dissipation of 1.47W and a minimum DC current gain of 150 at 500mA/10V, it provides excellent amplification characteristics. The DXTN3C100PD-13 is housed in an 8-PowerTDFN package with a PowerDI5060-8 (Type UXD) footprint for surface mounting. Its operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial, and consumer electronics sectors requiring compact and reliable power management solutions. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 1.47W |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 330mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 10V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | PowerDI5060-8 (Type UXD) |
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