DN0150BDJ-7
TRANS 2NPN 50V 0.1A SOT963Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated DN0150BDJ-7 is a dual NPN bipolar junction transistor array housed in a SOT-963 package. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 60MHz and a minimum DC current gain (hFE) of 200 at 2mA and 6V, it is suitable for general-purpose amplification and switching applications. The maximum power dissipation is 300mW, and it operates within a temperature range of -55°C to 150°C. The Vce saturation voltage is 250mV at 10mA base current and 100mA collector current. This component is commonly found in consumer electronics and industrial control systems. The device is supplied on a tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | SOT-963 |
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