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DMMT5551-7

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DMMT5551-7

TRANS 2NPN 160V 0.2A SOT26

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

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Diodes Incorporated DMMT5551-7 is a dual NPN bipolar junction transistor array featuring matched pair performance. This surface mount component, housed in a SOT-26 package, offers a collector-emitter breakdown voltage of 160V and a maximum continuous collector current of 200mA. It exhibits a transition frequency of 300MHz and a maximum power dissipation of 300mW. The DC current gain (hFE) is a minimum of 80 at 10mA and 5V, with a Vce saturation of 200mV at 5mA, 50mA. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in analog signal processing and general-purpose amplification applications across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual) Matched Pair
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max300mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)160V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageSOT-26

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