MIMD10A-7-F
TRANS PREBIAS NPN/PNP SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated MIMD10A-7-F is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-363 package. This dual-transistor configuration simplifies circuit design by integrating base resistors for immediate operation. The NPN element offers a collector current capability of up to 100mA with a transition frequency of 250MHz, while the PNP element supports up to 500mA with a 200MHz transition frequency. Both transistors exhibit a maximum collector-emitter breakdown voltage of 50V. Key parameters include a minimum DC current gain (hFE) of 100 at 1mA/5V for the NPN and specified current gains for PNP operation. The integrated base resistors are 100 Ohms and 10k Ohms for the NPN, and 10k Ohms for the PNP. Power dissipation is rated at 200mW. This component is commonly utilized in industrial automation, consumer electronics, and communication systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz, 200MHz |
| Resistor - Base (R1) | 100Ohms, 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-363 |