EMF21-7
TRANS NPN PREBIAS/PNP SOT563Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated EMF21-7 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a SOT-563 package. This device offers a collector-emitter breakdown voltage of 50V for the NPN and 12V for the PNP. Continuous collector current capabilities are 100mA for the NPN and 500mA for the PNP, with a maximum power dissipation of 300mW. The NPN transistor exhibits a minimum DC current gain (hFE) of 30 at 5mA, 5V and 270 at 10mA, 2V, with a transition frequency of 250MHz. The PNP transistor provides a transition frequency of 280MHz. Saturation voltages are specified at 300mV for the NPN at 500µA, 10mA and 250mV for the PNP at 10mA, 200mA. Integrated base resistors (R1) are 10kOhms, and emitter base resistors (R2) are 10kOhms. This component is commonly utilized in industrial and consumer electronics applications requiring simplified circuit designs and reduced component count. Supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 270 @ 10mA, 2V |
| Frequency - Transition | 250MHz, 280MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
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