DDA143EH-7
TRANS PREBIAS DUAL PNP SOT563Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated DDA143EH-7 is a dual PNP bipolar transistor array with integrated base resistors. This pre-biased transistor configuration, featuring 2 PNP elements, operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 250MHz and a power dissipation of 150mW. Each transistor includes internal base resistors of 4.7kOhms (R1 and R2) for simplified circuit design. The DC current gain (hFE) is a minimum of 20 at 10mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at 300mV maximum for a collector current of 10mA driven by 500µA base current. This component is supplied in a SOT-563 surface mount package, presented on tape and reel. It finds application in areas such as digital logic circuits and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-563 |
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