DDA124EK-7-F
TRANS PREBIAS DUAL PNP SOT26Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated DDA124EK-7-F is a dual PNP pre-biased bipolar junction transistor (BJT) housed in a SOT-26 package. This surface mount component features a Collector-Emitter Breakdown Voltage of 50V and a maximum Collector Current of 100mA. The device offers a typical DC Current Gain (hFE) of 56 at 5mA collector current and 5V Vce, with a transition frequency of 250MHz. Each transistor incorporates integrated base resistors (R1 = 22kO) and emitter resistors (R2 = 22kO) for simplified circuit design. The maximum power dissipation is 300mW. This component is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-26 |