DDA114YK-7-F
TRANS PREBIAS DUAL PNP SOT26Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated offers the DDA114YK-7-F, a dual PNP pre-biased bipolar transistor in a SOT-26 package. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 68 at 10mA and 5V, it is suitable for applications requiring signal amplification and switching. The internal base resistors are 10kOhms (R1) and 47kOhms (R2), enabling simplified circuit design. Power dissipation is rated at 300mW. The DDA114YK-7-F is commonly utilized in consumer electronics, industrial automation, and automotive systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-26 |