DDA114TU-7-F
TRANS 2PNP PREBIAS 0.2W SOT363Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated DDA114TU-7-F is a dual PNP pre-biased bipolar transistor array in a SOT-363 package. This surface mount component features a 50V collector-emitter breakdown voltage and a 100mA collector current. It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The device includes an integrated base resistor (R1) of 10kOhms, simplifying circuit design and reducing component count. Designed for efficient operation, it exhibits a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V Vce. Saturation voltage is rated at 300mV maximum at 100µA base current and 1mA collector current. This component is commonly utilized in consumer electronics, industrial control systems, and communication equipment. The DDA114TU-7-F is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-363 |
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