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Bipolar Transistor Arrays, Pre-Biased

DCX123JU-7

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DCX123JU-7

TRANS NPN/PNP PREBIAS SOT363

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Diodes Incorporated DCX123JU-7 is a dual pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a single SOT-363 package. This component provides a 50V collector-emitter breakdown voltage and can handle up to 100mA collector current. It offers a transition frequency of 250MHz and a maximum power dissipation of 200mW. The integrated base resistors are specified as 2.2kOhms (R1) and 47kOhms (R2). This device is suitable for surface mount applications and is supplied on tape and reel. Key applications include digital logic, signal switching, and general-purpose amplification in consumer electronics and industrial control systems. The device exhibits a Vce saturation of 300mV at 250µA base current and 5mA collector current, with a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V Vce. Collector cutoff current is a maximum of 500nA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSOT-363

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