DCX123JH-7
TRANS PREBIAS NPN/PNP SOT563Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays, Pre-Biased
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Diodes Incorporated DCX123JH-7, a dual pre-biased bipolar transistor array, integrates one NPN and one PNP transistor in a compact SOT-563 package. This component is designed for surface mount applications and offers a collector-emitter breakdown voltage of 50V. Key specifications include a maximum collector current of 100mA and a transition frequency of 250MHz. The device features integrated base resistors, with R1 specified at 2.2kOhms and R2 at 47kOhms, simplifying circuit design and reducing component count. The DC current gain (hFE) is a minimum of 80 at 10mA collector current and 5V Vce. Maximum power dissipation is 150mW. This component is commonly utilized in consumer electronics and industrial automation for signal switching and amplification. The DCX123JH-7 is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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