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FMMTH10TC

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FMMTH10TC

RF TRANS NPN 25V 650MHZ SOT23-3

Manufacturer: Diodes Incorporated

Categories: Bipolar RF Transistors

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Diodes Incorporated FMMTH10TC is an NPN bipolar RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 25V and a maximum collector current of 25mA. This device offers a transition frequency of 650MHz and a maximum power dissipation of 330mW. The DC current gain (hFE) is a minimum of 60 at 4mA and 10V. Noise figure is typically between 3dB and 5dB at 500MHz. The FMMTH10TC is supplied in a SOT-23-3 surface mount package, suitable for compact designs. Typical applications include amplification and switching in wireless communication systems, consumer electronics, and industrial control. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain-
Power - Max330mW
Current - Collector (Ic) (Max)25mA
Voltage - Collector Emitter Breakdown (Max)25V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)3dB ~ 5dB @ 500MHz
Supplier Device PackageSOT-23-3

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