FMMTH10TA
RF TRANS NPN 25V 650MHZ SOT23-3Manufacturer: Diodes Incorporated
Categories: Bipolar RF Transistors
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Diodes Incorporated FMMTH10TA is an NPN bipolar RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 25V and a maximum collector current of 25mA, with a maximum power dissipation of 330mW. The device offers a transition frequency of 650MHz and a typical DC current gain (hFE) of 60 at 4mA, 10V. Noise figure is rated at 3dB to 5dB at 500MHz. This SOT-23-3 packaged component is suitable for surface mounting and operates across a temperature range of -55°C to +150°C. It is commonly utilized in RF amplification and switching circuits across various communication systems and wireless infrastructure. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 330mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 5dB @ 500MHz |
| Supplier Device Package | SOT-23-3 |
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