BFS17HTC
RF TRANS NPN 15V 1.3GHZ SOT23-3Manufacturer: Diodes Incorporated
Categories: Bipolar RF Transistors
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The Diodes Incorporated BFS17HTC is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA. With a transition frequency of 1.3GHz and a power dissipation of 330mW, it is suitable for signal amplification and switching in RF circuits. The DC current gain (hFE) is a minimum of 70 at 2mA and 1V. The device exhibits a typical noise figure of 4.5dB at 500MHz. Packaged in a SOT-23-3 surface mount configuration, it operates across a temperature range of -55°C to 150°C. This component finds application in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 330mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA, 1V |
| Frequency - Transition | 1.3GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 500MHz |
| Supplier Device Package | SOT-23-3 |
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