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BFQ31ATA

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BFQ31ATA

RF TRANS NPN 15V 600MHZ SOT23-3

Manufacturer: Diodes Incorporated

Categories: Bipolar RF Transistors

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The Diodes Incorporated BFQ31ATA is a high-frequency NPN bipolar transistor designed for demanding RF applications. This surface-mount component, housed in a SOT-23-3 package, offers a collector current capability of up to 100mA and a collector-emitter breakdown voltage of 15V. With a transition frequency of 600MHz, it is suitable for signal amplification and switching in wireless communication systems, radar, and test equipment. The device exhibits a typical DC current gain (hFE) of 100 at 3mA and 1V, and a noise figure of 6dB at 60MHz, ensuring efficient signal processing. Its maximum power dissipation is rated at 330mW, and it operates over an extended temperature range of -55°C to 150°C. The BFQ31ATA is supplied in Tape & Reel packaging for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain-
Power - Max330mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 3mA, 1V
Frequency - Transition600MHz
Noise Figure (dB Typ @ f)6dB @ 60MHz
Supplier Device PackageSOT-23-3

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