S34MS04G204BHI010
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Cypress Semiconductor Corp
Categories: Memory
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Cypress Semiconductor Corp presents the S34MS04G204BHI010, a 4Gbit Parallel NAND Flash memory device from the MS-2 series. This non-volatile memory utilizes a 256M x 16 organization and offers an access time of 45 ns. Designed for surface mount applications, it comes in a 63-BGA (11x9) package. The component operates within a voltage range of 1.7V to 1.95V and features a write cycle time of 45ns per word/page. This device is suitable for applications in consumer electronics, industrial systems, and automotive sectors demanding high-density, parallel flash storage.
Additional Information
Series: MS-2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (11x9) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
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