S34MS02G104BHI010
IC FLASH 2GBIT PARALLEL 63BGAManufacturer: Cypress Semiconductor Corp
Categories: Memory
Quality Control: Learn More
Cypress Semiconductor Corp MS-1 series 2Gbit Parallel NAND FLASH memory, part number S34MS02G104BHI010, offers a robust solution for high-density data storage. This non-volatile memory component features a 128M x 16 organization, accessible via a parallel interface with a rapid 45 ns access time. Designed for demanding applications, it operates within a voltage range of 1.7V to 1.95V and supports an extended operating temperature range of -40°C to 85°C. The component is housed in a compact 63-BGA (11x9) package, suitable for surface mount applications. This NAND FLASH memory is instrumental in various industries, including consumer electronics, industrial automation, and networking infrastructure, where reliable and high-speed data storage is critical.
Additional Information
Series: MS-1RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (11x9) |
| Write Cycle Time - Word, Page | 45ns |
| Memory Interface | Parallel |
| Access Time | 45 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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