S34ML04G200BHI003
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Cypress Semiconductor Corp
Categories: Memory
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Cypress Semiconductor Corp's ML-2 series S34ML04G200BHI003 is a 4Gbit NAND Flash memory device with a parallel interface, presented in a 63-BGA (11x9) package. This non-volatile memory utilizes advanced FLASH technology, organized as 512M x 8, for high-density data storage. The device operates within a voltage range of 2.7V to 3.6V and supports a write cycle time of 25ns per word/page. Designed for surface mounting, it is supplied on tape and reel, suitable for automated assembly processes. The operating temperature range is specified as -40°C to 85°C. This component finds application in various industrial sectors requiring robust and high-capacity non-volatile storage solutions.
Additional Information
Series: ML-2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (11x9) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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