S34ML04G200BHI000
IC FLASH 4GBIT PARALLEL 63BGAManufacturer: Cypress Semiconductor Corp
Categories: Memory
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Cypress Semiconductor Corp ML-2 series NAND Flash memory, part number S34ML04G200BHI000, offers 4Gbit of non-volatile storage with a parallel interface. This component features a 512M x 8 memory organization and is housed in a compact 63-BGA (11x9) package suitable for surface mounting. Operating within a voltage range of 2.7V to 3.6V, it boasts a word/page write cycle time of 25ns. The S34ML04G200BHI000 is designed for demanding applications operating across an industrial temperature range of -40°C to 85°C. Its robust NAND Flash technology makes it a suitable choice for various industrial automation, telecommunications, and consumer electronics systems requiring high-density, reliable data storage.
Additional Information
Series: ML-2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (11x9) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 512M x 8 |
| Programmable | Verified |
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