S34ML02G104BHB013
IC FLASH 2GBIT PARALLEL 63BGAManufacturer: Cypress Semiconductor Corp
Categories: Memory
Quality Control: Learn More
Cypress Semiconductor Corp S34ML02G104BHB013 is a 2Gbit NAND Flash memory device featuring a parallel interface. Organized as 128M x 16, this non-volatile memory component is presented in a compact 63-BGA (11x9) package, suitable for surface mount applications. The S34ML02G104BHB013 operates within a voltage range of 2.7V to 3.6V and boasts a word/page write cycle time of 25ns. Qualified to AEC-Q100 standards and designated with an automotive grade, this ML-1 series device is engineered for demanding environments. Its robust performance makes it a suitable choice for applications in the automotive and industrial sectors, where reliable data storage is critical. The component is supplied in Tape & Reel packaging.
Additional Information
Series: ML-1RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Memory Format | FLASH |
| Supplier Device Package | 63-BGA (11x9) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |