CY7C1370DV25-200BZI
IC SRAM 18MBIT PARALLEL 165FBGAManufacturer: Cypress Semiconductor Corp
Categories: Memory
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Cypress Semiconductor Corp's CY7C1370DV25-200BZI is a high-performance 18Mbit synchronous SRAM device operating at 200 MHz with an access time of 3 ns. This NoBL™ series component features a parallel interface and a memory organization of 512K x 36. Engineered for demanding applications, it supports a supply voltage range of 2.375V to 2.625V and operates within an industrial temperature range of -40°C to 85°C. The device is housed in a compact 165-FBGA (13x15) package, suitable for surface-mount assembly. This memory solution is commonly utilized in networking infrastructure, high-speed communication systems, and advanced computing platforms.
Additional Information
Series: NoBL™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 165-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 18Mbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.375V ~ 2.625V |
| Technology | SRAM - Synchronous, SDR |
| Clock Frequency | 200 MHz |
| Memory Format | SRAM |
| Supplier Device Package | 165-FBGA (13x15) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Access Time | 3 ns |
| Memory Organization | 512K x 36 |
| Programmable | Not Verified |
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