CY10E422L-7DC
IC SRAM 1KBIT PARALLEL 24SBDIPManufacturer: Cypress Semiconductor Corp
Categories: Memory
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Cypress Semiconductor Corp CY10E422L-7DC is an asynchronous SRAM memory device offering 1Kbit of storage organized as 256 words by 4 bits. This volatile memory component features a fast 7 ns access time, making it suitable for applications demanding rapid data retrieval. The parallel interface facilitates straightforward integration into system designs. Manufactured with SRAM technology, it operates within a supply voltage range of 4.94V to 5.46V and has a write cycle time of 7ns. The CY10E422L-7DC is supplied in a 24-SBDIP package, designed for through-hole mounting. This component finds application in industrial and commercial electronics where reliable, fast memory is essential. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 24-CDIP (0.400"", 10.16mm) |
| Mounting Type | Through Hole |
| Memory Size | 1Kbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.94V ~ 5.46V |
| Technology | SRAM - Asynchronous |
| Memory Format | SRAM |
| Supplier Device Package | 24-SBDIP |
| Write Cycle Time - Word, Page | 7ns |
| Memory Interface | Parallel |
| Access Time | 7 ns |
| Memory Organization | 256 x 4 |
| Programmable | Not Verified |
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