CMS80N06D-HF
MOSFET N-CH 60V 14A/80A DPAKManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CMS80N06D-HF is an N-channel power MOSFET designed for demanding applications. This TO-252 (DPAK) packaged device offers a 60V drain-source voltage rating and supports a continuous drain current of 14A at ambient temperature (Ta) and 80A at case temperature (Tc). With a low on-resistance of 7 mOhm at 20A and 10V Vgs, it exhibits excellent conduction efficiency. The MOSFET features a maximum gate-source voltage of ±20V and a threshold voltage of 4V. Key electrical parameters include a gate charge of 118 nC and input capacitance of 4871 pF. Power dissipation is rated at 2.5W (Ta) and 83W (Tc). This component is suitable for use in automotive, industrial power, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4871 pF @ 30 V |
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