CMS70N10H8-HF
MOSFET N-CH 100V 70A DFN5X6Manufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CMS70N10H8-HF is an N-Channel Power MOSFET featuring a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 70A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 6.5mOhm at 20A and 10V, with a gate-source voltage (Vgs) range of +/-20V and +/-12V. The CMS70N10H8-HF is housed in an 8-Power DFN5x6 (PR-PAK) surface mount package, suitable for applications requiring high current density. It exhibits a maximum power dissipation of 2W (Ta) and 142W (Tc). Key parameters include Input Capacitance (Ciss) of 4570pF at 25V and Gate Charge (Qg) of 58.2 nC at 10V. This MOSFET is utilized in power management solutions, automotive electronics, and industrial power applications. The operating temperature range is -50°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 142W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -12V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4570 pF @ 25 V |
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