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CMS70N04H8-HF

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CMS70N04H8-HF

MOSFET N-CH 40V 70A DFN5X6

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Comchip Technology CMS70N04H8-HF is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 40V drain-source voltage (Vdss) and supports a continuous drain current of 70A at 25°C (Tc). With a low on-resistance of 8.5mOhm at 20A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in a compact DFN5x6 (PR-PAK) package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 19.7 nC at 10V and a maximum input capacitance (Ciss) of 1278 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). Its robust power dissipation capabilities, rated at 2W (Ta) and 72.3W (Tc), make it suitable for demanding power management solutions in automotive, industrial, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 72.3W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDFN5x6 (PR-PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1278 pF @ 25 V

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