CMS45P03H8-HF
MOSFET P-CH 30V 9.6A/45A DFN5X6Manufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CMS45P03H8-HF is a P-Channel MOSFET designed for efficient power management. This device features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 9.6A at 25°C ambient and 45A at 25°C case temperature. The maximum power dissipation is 2W ambient and 45W case. With a low on-resistance (Rds On) of 15mOhm at 30A and 10V, it is suitable for applications requiring minimal conduction losses. The MOSFET is housed in an 8-PowerTDFN (DFN5x6 PR-PAK) surface-mount package and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 22 nC at 4.5V and input capacitance (Ciss) of 2215 pF at 15V. This component is utilized in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2215 pF @ 15 V |
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