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CMS42P03V8-HF

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CMS42P03V8-HF

MOSFET P-CH 30V 42A 8DFN

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Comchip Technology CMS42P03V8-HF is a P-Channel MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 42A at 25°C (Tc). The CMS42P03V8-HF offers a low on-resistance (Rds On) of 15mOhm at 30A and 10V. It supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Key electrical parameters include a gate charge (Qg) of 22 nC at 4.5V and an input capacitance (Ciss) of 2215 pF at 15V. With a maximum power dissipation of 37W (Tc) and 1.67W (Ta), this device is suitable for demanding applications. The CMS42P03V8-HF is housed in a compact 8-PowerWDFN (SPR-PAK) package, measuring 3.3x3.3mm, and is supplied on tape and reel. This MOSFET is utilized in various industries including automotive and industrial power control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.67W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-PDFN (SPR-PAK ) (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2215 pF @ 15 V

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