CMS42N10H8-HF
MOSFET N-CH 100V 6.6A DFN5X6Manufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CMS42N10H8-HF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.6A at 25°C ambient temperature, with a maximum power dissipation of 3.6W (Ta) or 83.3W (Tc). The device offers a low on-resistance (Rds On) of 60mOhm maximum at 3.2A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 34 nC maximum at 10V Vgs and input capacitance (Ciss) of 1325 pF maximum at 30V Vds. The CMS42N10H8-HF utilizes a DFN5x6 (PR-PAK) surface mount package for compact integration. It is suitable for use in power supplies, battery management, and automotive electronics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1325 pF @ 30 V |
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