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CMS40N03V8-HF

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CMS40N03V8-HF

MOSFET N-CH 30V 25A/40A 8DFN

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Comchip Technology CMS40N03V8-HF is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 25A at ambient temperature and 40A at case temperature. The low on-resistance (Rds On) of 4.8mOhm at 19A and 10V gate drive highlights its low conduction losses. With a maximum power dissipation of 3.8W (Ta) and 52W (Tc), the CMS40N03V8-HF is suitable for demanding applications. The component is housed in an 8-PowerWDFN (SPR-PAK) package with dimensions of 3.3x3.3mm, facilitating compact board designs. Key parameters include a gate charge (Qg) of 12 nC at 4.5V and input capacitance (Ciss) of 1750 pF at 15V. This MOSFET operates across a temperature range of -55°C to 150°C. It finds utility in various industries including automotive, industrial power supplies, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs4.8mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-PDFN (SPR-PAK ) (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 15 V

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