CMS35P03D-HF
MOSFET P-CH 30V 8.5A/34A DPAKManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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The Comchip Technology CMS35P03D-HF is a P-Channel MOSFET designed for demanding power management applications. This component features a drain-to-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 8.5A at 25°C ambient temperature, scaling to 34A at 25°C case temperature. With a low on-resistance (Rds On) of 25mOhm at 15A and 10V gate-to-source voltage, it minimizes conduction losses. The device is packaged in a TO-252 (DPAK) surface mount configuration, suitable for high-density board designs. Key electrical characteristics include a gate charge (Qg) of 12.5 nC maximum at 4.5V and an input capacitance (Ciss) of 1345 pF maximum at 15V. It operates across a wide temperature range of -55°C to 150°C. The CMS35P03D-HF is utilized in industries such as automotive, industrial power control, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta), 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 34W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1345 pF @ 15 V |
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