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CMS35N04V8-HF

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CMS35N04V8-HF

MOSFET N-CH 40V 35A 8DFN

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Comchip Technology CMS35N04V8-HF is an N-Channel MOSFET designed for demanding power applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 35A at 25°C (Tc). The low on-resistance of 9mOhm at 10A and 10V gate-source voltage (Vgs) ensures efficient power transfer. With a maximum gate charge (Qg) of 19.7 nC at 10V Vgs and input capacitance (Ciss) of 1220 pF at 25V Vds, it is suitable for high-frequency switching. The MOSFET offers a power dissipation of 2W (Ta) and 44W (Tc), with a wide operating temperature range of -55°C to 150°C. Packaged in an 8-PDFN (SPR-PAK) with dimensions of 3.3x3.3mm, this surface-mount component is ideal for use in power management, automotive electronics, and industrial control systems. The device supports drive voltages from 4.5V to 10V and has a Vgs(th) of 2.5V at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-PDFN (SPR-PAK ) (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 25 V

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