CMS32P03V8-HF
MOSFET P-CH 30V 7.7A/32A 8DFNManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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The Comchip Technology MOSFET P-Channel CMS32P03V8-HF is a high-performance power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 7.7 A at ambient temperature (Ta) and 32 A at case temperature (Tc). With a maximum Rds On of 20 mOhm at 15 A and 10 V, it offers low conduction losses. The device is packaged in an 8-PowerWDFN (SPR-PAK) (3.3x3.3 mm) for surface mounting and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a Gate Charge (Qg) of 12.5 nC at 4.5 V and an Input Capacitance (Ciss) of 1345 pF at 15 V. Its power dissipation capabilities are 1.6 W (Ta) and 29 W (Tc). This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 29W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (SPR-PAK ) (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1345 pF @ 15 V |
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