CMS25N10D-HF
MOSFET P-CH 100V 25A DPAKManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CMS25N10D-HF is a P-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 25A at 25°C (Tc). The low on-resistance (Rds On) of 48mOhm at 25A and 10V gate drive, coupled with a maximum gate charge of 60nC at 10V, ensures efficient power switching. The MOSFET is housed in a TO-252 (DPAK) surface-mount package, offering a maximum power dissipation of 60W at 25°C (Tc). Key parameters include an input capacitance (Ciss) of 3848pF at 15V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. This component is commonly utilized in power management, automotive systems, and industrial controls. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3848 pF @ 15 V |
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