CMS25N03V8-HF
MOSFET N-CH 30V 25A 8DFNManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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The Comchip Technology CMS25N03V8-HF is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 25A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 18mOhm at 10A and 10V Vgs. Key parameters include a low gate charge (Qg) of 7.2 nC at 4.5V Vgs and an input capacitance (Ciss) of 572 pF at 15V Vds. The MOSFET supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 2.5V at 250µA. It offers a maximum power dissipation of 1.7W (Ta) and 20W (Tc). The CMS25N03V8-HF is housed in an 8-PowerWDFN package, specifically an 8-PDFN (SPR-PAK) measuring 3.3x3.3mm, suitable for surface mounting. This component is commonly utilized in automotive, industrial, and consumer electronics power management systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PDFN (SPR-PAK ) (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 572 pF @ 15 V |
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