CMS2305A-HF
MOSFET P-CH 30V 3.2A SOT23-3Manufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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The Comchip Technology CMS2305A-HF is a P-Channel MOSFET designed for efficient switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 30V, this device offers a continuous drain current (Id) of 3.2A at 25°C, with a maximum power dissipation of 1.38W (Ta). The Rds On is specified at a low 25mOhm maximum at 10A and 10V Vgs. Gate drive flexibility is provided with a Vgs(th) of 1.2V maximum and a Vgs range of ±12V. The device exhibits an input capacitance (Ciss) of 735pF maximum at 25V Vds and a gate charge (Qg) of 10nC maximum at 4.5V Vgs. Packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface mount configuration, the CMS2305A-HF is suitable for use in power management, battery protection, and various consumer electronics applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.38W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 25 V |
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