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CMS2301T-HF

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CMS2301T-HF

MOSFET P-CH 20V 3A SOT23-3

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Comchip Technology CMS Series P-Channel MOSFET, part number CMS2301T-HF. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The Rds(On) is specified at a maximum of 110mOhm at 3A, 4.5V Vgs. Drive voltages for optimal Rds(On) are 2.5V and 4.5V. Key parameters include a gate charge (Qg) of 12 nC at 2.5V Vgs and input capacitance (Ciss) of 405 pF at 10V Vds. The device is packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount configuration, with a maximum power dissipation of 1W. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in various applications including power management and consumer electronics.

Additional Information

Series: CMSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 10 V

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