CMS16P06H8-HF
MOSFET P-CH 60V 5A/16A DFN5X6Manufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CMS16P06H8-HF is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and continuous drain current capabilities of 5A at ambient temperature (Ta) and 16A at case temperature (Tc). The power dissipation is rated at 2W (Ta) and 25W (Tc). Key parameters include a maximum Rds On of 48mOhm at 8A and 10V Vgs, and a gate charge (Qg) of 22 nC at 10V. Input capacitance (Ciss) is 1256 pF at 30V. The device utilizes a DFN5x6 (PR-PAK) surface mount package, operating across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1256 pF @ 30 V |
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