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CMS16N06D-HF

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CMS16N06D-HF

MOSFET N-CH 60V 4.4A/16A DPAK

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Comchip Technology CMS16N06D-HF is an N-Channel MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and offers a continuous drain current of 4.4A at ambient temperature and 16A at case temperature. With a low on-resistance of 50mOhm maximum at 8A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET is packaged in a TO-252 (DPAK) surface-mount package, providing efficient thermal dissipation with a maximum power dissipation of 2W (Ta) or 27W (Tc). Key parameters include a gate charge of 14nC at 10V and input capacitance of 815pF at 15V. Operating temperature range is -55°C to 150°C. This component is suitable for use in power management, automotive electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds815 pF @ 15 V

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